Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Cree, Inc
|
CGHV31500F |
722Kb/10P |
500 W, 2700 - 3100 MHz, 50-Ohm Input |
CGHV14500 |
1Mb/11P |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems |
PTVA120121M |
530Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz |
PTVA035002EV |
462Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 ??450 MHz |
PTVA120252MT |
530Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 ??1400 MHz |
PTVA120251EA |
876Kb/14P |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz |
GTVA355001EC |
512Kb/6P |
Thermally-Enhanced High Power RF GaN on SiC HEMTs 500 W, 50 V, 2900 ??3500 MHz |