Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Shenzhen Huazhimei Semi...
|
HMG60N60A |
902Kb/7P |
600V insulated gate bipolar transistor |
HM6604BWKR |
1Mb/8P |
Complementary Enhancement Mode Field Effect Transistor |
HMG20N60A |
633Kb/5P |
20A, 600V insulated gate bipolar transistor |
HMG40N60A |
750Kb/5P |
40A, 600V insulated gate bipolar transistor |
BSS84KR |
330Kb/4P |
P-Channel Enhancement Mode Field Effect Transistor |
HM13003 |
316Kb/6P |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
BSS8402DW |
315Kb/6P |
Complementary Pair Enhancement Mode Field Effect Transistor |
HM2301BWKR |
411Kb/6P |
Dual P-Channel Enhancement Mode Field Effect Transistor |
HM4618SP |
665Kb/6P |
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
HM603BK |
938Kb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM609BK |
2Mb/8P |
N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. |
HM1P10MR |
763Kb/5P |
P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |