Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Nexperia B.V. All right...
|
PMEG120G20ELP |
250Kb/14P |
120 V, 2 A Silicon Germanium (SiGe) rectifier 26 May 2020 |
PMEG120G10ELR-Q |
257Kb/14P |
120 V, 1 A Silicon Germanium (SiGe) rectifier 12 May 2021 |
PMEG120G20ELP-Q |
251Kb/14P |
120 V, 2 A Silicon Germanium (SiGe) rectifier 12 May 2021 |
PMEG120G30ELP-Q |
252Kb/14P |
120 V, 3 A Silicon Germanium (SiGe) rectifier 14 May 2021 |
PMEG120G20ELR |
257Kb/14P |
120 V, 2 A Silicon Germanium (SiGe) rectifier 28 February 2020 |
PMEG120G20ELR-Q |
257Kb/14P |
120 V, 2 A Silicon Germanium (SiGe) rectifier 12 May 2021 |
PMEG120G10ELR |
287Kb/14P |
120 V, 1 A Silicon Germanium (SiGe) rectifier 1 October 2022 |
PMEG120G30ELP |
251Kb/14P |
120 V, 3 A Silicon Germanium (SiGe) rectifier 26 May 2020 |
PBSS5112PAP |
751Kb/17P |
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 30 November 2012 |
PBSS4112PAN |
752Kb/17P |
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor 29 November 2012 |
PBSS4112PANP |
854Kb/21P |
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor 29 November 2012 |
BUK9M120-100E |
730Kb/13P |
N-channel 100 V, 120 m廓 logic level MOSFET in LFPAK33 |
PSMN6R3-120ES |
742Kb/12P |
N-channel 120 V 6.7 m廓 standard level MOSFET in I2PAK |
PSMN7R8-120ES |
743Kb/13P |
N-channel 120 V 7.9 m廓 standard level MOSFET in I2PAK |
PSMN6R3-120PS |
744Kb/12P |
N-channel 120 V 6.7 m廓 standard level MOSFET in TO-220 |
PSMN3R9-100YSF |
310Kb/13P |
NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package 11 June 2021 |
PSMN3R5-40YSD |
288Kb/13P |
N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 2 October 2018 |
PSMN3R2-40YLD |
311Kb/13P |
N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 26 August 2019 |