Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Infineon Technologies A...
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BAT15-02EL |
1Mb/16P |
Low barrier type for DBS mixer applications |
BAT63 |
889Kb/9P |
Low barrier diode for detectors up to GHz frequencies 2011-06-15 |
BAT6203WE6327 |
1Mb/18P |
Low barrier diode for detectors up to GHz frequencies 2011-06-15 |
BAT62 |
1Mb/19P |
Low barrier diode for detectors up to GHz frequencies 2014-02-13 |
IDH09G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDH10G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDW10G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
IDW20G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
IDH06G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDH08G65C5 |
1Mb/13P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDH16G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDW30G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
IDH03G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDH05G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDW40G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
IDH04G65C5 |
1Mb/13P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDH20G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10 |
IDW16G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
IDW12G65C5 |
1Mb/11P |
ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15 |
IKZA50N65RH5 |
1Mb/15P |
TRENCHSTOPTM 5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM Schottky barrier diode V2.1 2020-07-27 |