P-CHANNEL Datasheet(PDF) - BSB027P03LX3G - Infineon Technologies AG

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P-CHANNEL Scheda tecnica, PDF

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Parola chiave cercata : 'P-CHANNEL' - Total: 542 (1/28) Pages

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Infineon Technologies A...	BSB027P03LX3G	1Mb/13P	p-Channel Power MOSFET 1.9, 2011-03-02
	IRF7342PBF	337Kb/8P	Dual P Channel MOSFET 2016-5-26
	IPD068P03L3G	563Kb/9P	single P-Channel in DPAK Rev. 2.1 2014-05-16
	IPB120P04P4-04	243Kb/9P	P-channel - Normal Level - Enhancement mode Rev. 1.1 2015-05-27
	IRF7307PBF	287Kb/10P	Dual N and P Channel Mospet 10/7/04
	IPB120P04P4L-03	254Kb/9P	P-channel - Logic Level - Enhancement mode Rev. 1.1 2015-05-27
	SPP15P10PLG	416Kb/10P	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode Rev 1.3 2009-10-27
	SPD04P10PL	777Kb/9P	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode Rev 1.5 2009-02-16
	SPD08P06P	598Kb/9P	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode Rev 1.9 2008-10-13
	SPD04P10P	831Kb/9P	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode Rev 1.5 2009-02-16
	SPP18P06P	759Kb/9P	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode Rev1.8 2009-04-14
	SPP15P10P	640Kb/10P	SIPMOS짰 Small-Signal-Transistor Features P-Channel Enhancement mode Rev 1.6 2009-08-25
	SPP08P06P	843Kb/10P	P-Channel Enhancement mode Avalanche rated dv/dt rated Rev 1.5 2009-04-14
	BSO080P03SH	329Kb/9P	OptiMOTM-P Power-Transistor Rev.1.31 2010-02-10
	BSO201SPH	319Kb/9P	OptiMOS P-Power-Transistor Rev.1.32 2009-12-21
	BSO203PH	321Kb/9P	OptiMOS P-Power-Transistor Rev.1.31 2010-02-15
	IPP80P03P3L-04	226Kb/4P	OptiMOS-P Power-Transistor 2004-03-04
	BSO301SPH	331Kb/9P	OptiMOS-P Power-Transistor Rev. 1.32 2010-05-12
	SPD50P03LG	633Kb/9P	OptiMOS-P Power-Transistor Rev. 1.8 2008-07-10
	SPD50P03L	77Kb/8P	OptiMOS-P Power - Transistor 2001-12-06

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Cosa è P-CHANNEL

Il canale P è uno dei componenti elettronici, che utilizza elettroni che conducono carica positiva per controllare i circuiti elettrici.

Come N-Cannel, è uno di un tipo di transistor chiamato transistor Effect Field a semiconduttore di ossido di metallo (MOSFET).

Un MOSFET a canale P è costituito da un dispositivo a semiconduttore con un canale che conduce carica positiva.

Poiché questo canale è un dispositivo bipolare, quando viene applicata una piccola quantità di carica sul canale bipolare, la carica scorre attraverso il canale e trasforma il dispositivo in uno stato On.

D'altra parte, in un MOSFET a canale p polarità negativo, il dispositivo rimane spento quando viene applicata una carica al canale.

A differenza dei MOSFET N-Canale, i MOSFET P-Canale hanno un canale bipolare, quindi a differenza dei MOSFET N-Canale N, rispondono ai segnali bipolari.

In genere, i MOSFET a canale p vengono utilizzati per la commutazione di alimentazione, la protezione dell'inversione della tensione, la modalità di alimentazione a bassa potenza, in protezione della tensione, ecc.

*Queste informazioni sono solo a scopo informativo generale, non saremo responsabili per eventuali perdite o danni causati dalle informazioni di cui sopra.

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